Multi-functional Sputtering Device 【MiniLab-S060】
A compact multi-thin film device that incorporates sputtering, deposition, electron beam (EB), and annealing thin film modules in a 60-liter volume chamber, suitable for various applications.
4 cathodes with Φ2 inch mounted Simultaneous film formation: 3-component simultaneous film formation (RF 500W or DC 850W) + HiPIMS (Pulse DC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed from the HMI screen using the plasma relay switch MFC x 3 systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coat) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Plasma etching can be installed in either the main chamber or the load lock chamber. ● Mixed specifications such as resistance heating deposition, organic material deposition, EB deposition, and PECVD can also be configured.
- Company：テルモセラ・ジャパン 本社
- Price：Other
